Title :
10 and 26 GHz differential VCOs using InP HBTs
Author :
Montgomery, R.K. ; Humphrey, D.A. ; Hamm, R. ; Ren, F. ; Malik, R.J. ; Kopf, R.F. ; Tate, A. ; Smith, P.R. ; Ryan, R.W. ; Lin, J. ; Chen, Y.K.
Author_Institution :
Lucent Technol., Whippany, NJ, USA
Abstract :
We have built 10 and 26 GHz differential VCOs using InP HBTs. Both oscillators use a 3 stage emitter coupled pair ring section. The 10 GHz VCO is connected in the well known fashion but the 26 GHz circuit uses a patented summed output from each of the three ECP (Emitter Coupled Pair) stages. The circuits are powered from a single 5 V supply consuming 250 mW. The chip size is 870/spl times/975 /spl mu/m/sup 2/. The phase noise at a 100 kHz offset for the 10 and 26 GHz oscillators is 83 dBc/Hz and -70 dBc/Hz respectively.
Keywords :
III-V semiconductors; MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; indium compounds; integrated circuit measurement; microwave oscillators; phase noise; voltage-controlled oscillators; 10 GHz; 250 mW; 26 GHz; 5 V; HBTs; InP; chip size; differential VCOs; emitter coupled pair ring section; offset; phase noise; summed output; Coupling circuits; Frequency estimation; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Phase noise; Ring oscillators; Tin; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512222
