Title :
A GaAs MMIC PIN diode receiver protector with switchable attenuator
Author :
Niehenke, E.C. ; Stenger, P.A. ; Degenford, J.E.
Author_Institution :
Electron. Syst. Group, Westinghouse Electr. Corp., Baltimore, MD, USA
Abstract :
Design and performance of a unique X-band GaAs MMIC PIN diode receiver protector (RP) with switchable attenuator is described with a maximum average and peak leakage levels of 17 dBm and 20 dBm respectively. The fast acting 8 diode RP requires no external biasing and exhibits a recovery time of 50 ns. The MMIC includes a switchable 13 dB attenuator after the RP. Two RP/attenuator circuits for balanced operation are included in a 120 by 150 by 6 mil MMIC which exhibits only 0.55 to 0.7 dB loss, and a return loss of 15 to 30 dB over an octave bandwidth.
Keywords :
III-V semiconductors; MMIC; attenuators; gallium arsenide; microwave receivers; p-i-n diodes; protection; 0.55 to 0.7 dB; 15 to 30 dB; 50 ns; GaAs; MMIC PIN diode receiver protector; SHF; X-band; switchable attenuator; Attenuation; Attenuators; Coupling circuits; Diodes; Gallium arsenide; Instruments; MMICs; Protection; Radio frequency; Resistors;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512241
