DocumentCode
2272085
Title
A GaAs MMIC PIN diode receiver protector with switchable attenuator
Author
Niehenke, E.C. ; Stenger, P.A. ; Degenford, J.E.
Author_Institution
Electron. Syst. Group, Westinghouse Electr. Corp., Baltimore, MD, USA
Volume
3
fYear
1996
fDate
17-21 June 1996
Firstpage
1589
Abstract
Design and performance of a unique X-band GaAs MMIC PIN diode receiver protector (RP) with switchable attenuator is described with a maximum average and peak leakage levels of 17 dBm and 20 dBm respectively. The fast acting 8 diode RP requires no external biasing and exhibits a recovery time of 50 ns. The MMIC includes a switchable 13 dB attenuator after the RP. Two RP/attenuator circuits for balanced operation are included in a 120 by 150 by 6 mil MMIC which exhibits only 0.55 to 0.7 dB loss, and a return loss of 15 to 30 dB over an octave bandwidth.
Keywords
III-V semiconductors; MMIC; attenuators; gallium arsenide; microwave receivers; p-i-n diodes; protection; 0.55 to 0.7 dB; 15 to 30 dB; 50 ns; GaAs; MMIC PIN diode receiver protector; SHF; X-band; switchable attenuator; Attenuation; Attenuators; Coupling circuits; Diodes; Gallium arsenide; Instruments; MMICs; Protection; Radio frequency; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.512241
Filename
512241
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