DocumentCode :
2272146
Title :
3-D centric technology and realization with TSV
Author :
Lin, Chang-Tzu ; Lee, Chia-Hsin ; Tseng, Tsu-Wei ; Kwai, Ding-Ming ; Chou, Yung-Fa
Author_Institution :
Inf. & Commun. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2012
fDate :
23-25 April 2012
Firstpage :
1
Lastpage :
4
Abstract :
Modern mobile device possesses function-rich, small, thin, low-power features. The electronics industry aggressively seeks possible solutions to achieve these demands. Among different techniques, 3-D integration can effectively provide such kind of advantages. However, to successfully accomplish vertical stacking, readiness of design toolset is one of the most important keys. In this paper, we present the challenges and state-of-the-art features of 3-D EDA tool chain. We introduce the complete realization technologies of system integration with through-silicon via (TSV) using TSMC 90nm process. For optimization of system performance, we summarize the stacking concerns for timing constraints due to various stacking applications. With the configurations, an approach is proposed to overcome 3-D timing optimization problem because commercial tool tackles only one die at one time. Empirical results show the approach is promising for present 3-D centric design methodologies.
Keywords :
electronic design automation; low-power electronics; three-dimensional integrated circuits; 3D EDA tool chain; 3D centric design methodologies; 3D integration; TSMC process; TSV; complete realization technologies; design toolset; electronic design automation; electronics industry; low-power features; modern mobile device; size 90 nm; system performance; through-silicon via; timing constraints; vertical stacking; Capacitance; Delay; Optimization; Stacking; Through-silicon vias; electronic design automation (EDA); micro bump (μbump); redistribution layer (RDL); three-dimensional integrated circuit (3-D IC); through-silicon via (TSV);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on
Conference_Location :
Hsinchu
ISSN :
PENDING
Print_ISBN :
978-1-4577-2080-2
Type :
conf
DOI :
10.1109/VLSI-DAT.2012.6212631
Filename :
6212631
Link To Document :
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