DocumentCode
2272211
Title
A high-speed dual-phase processing pipelined domino circuit design with a built-in performance adjusting mechanism
Author
Cheng, Ching-Hwa ; Guo, Jiun-In
Author_Institution
Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan
fYear
2012
fDate
23-25 April 2012
Firstpage
1
Lastpage
4
Abstract
A high-speed dual-phase domino circuit design with high performance and reliable characteristics is proposed. The cell-based automatic synthesis flow supports the quick design of high performance chips. The test chip of a dual-phase 64-bit high-speed multiplier with a built-in performance adjustment mechanism has been successfully validated using TSMC 0.18um CMOS technology. The test chip shows a 2.7X performance improvement compared to the conventional static CMOS logic design. In addition, a cell-based synthesizable design CAD flow, with consideration of the skew-tolerant issue has been established. A latched type domino cell library with noise-alleviation, charge sharing, and crosstalk alleviation abilities was also developed to support the proposed design flow. Finally, a built-in performance adjustment mechanism is conducted within the design. This mechanism supports performance adjustment after chip fabrication, under clock skew considerations.
Keywords
CAD; CMOS integrated circuits; integrated circuit design; microprocessor chips; multiplying circuits; pipeline arithmetic; CAD flow; TSMC CMOS technology; built-in performance adjusting mechanism; cell-based automatic synthesis flow; cell-based synthesizable design; charge sharing; crosstalk alleviation; dual-phase high-speed multiplier; high performance chips; high-speed dual-phase processing; latched type domino cell library; noise-alleviation; pipelined domino circuit design; size 0.18 mum; skew-tolerant issue; word length 64 bit; Circuit synthesis; Clocks; Delay; Latches; Logic gates; Pipelines; Synchronization; performance adjustment; pipelined domino circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on
Conference_Location
Hsinchu
ISSN
PENDING
Print_ISBN
978-1-4577-2080-2
Type
conf
DOI
10.1109/VLSI-DAT.2012.6212635
Filename
6212635
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