DocumentCode
2272264
Title
Silicon nanowires thermoelectric devices
Author
Li, Y. ; Buddharaju, K. ; Singh, N. ; Lo, G.Q. ; Lee, S.J.
fYear
2010
fDate
27-29 Oct. 2010
Firstpage
1181
Lastpage
1185
Abstract
Thermoelectric units have been promising candidates at micro processor cooling and even at power generation at a micro-watt level. In fact thermoelectric energy converters can directly convert even low-grade heat gradients to electricity. However it has been a challenging task to scale down conventional thermoelectric materials as most of them are not CMOS compatible. Recent works on Silicon Nanowire arrays show great promise as highly scalable and efficient thermoelectric materials. In this work, we explore the potential of Silicon nanowires as a thermoelectric device. Numerical simulations on Silicon nanowires are performed to investigate both the power generation and cooling capability. Practical perspectives surrounding cover/insulation of wires cannot be avoided completely, hence in the cooling simulations, we included both the cooling potential of single isolated Silicon nanowire and Silicon nanowire with surrounding cover. Silicon nanowire individually has a large cooling power density but it was found that the inclusion of a surrounding material has a detrimental effect on the cooling performance.
Keywords
cooling; elemental semiconductors; microprocessor chips; nanowires; silicon; thermoelectric devices; CMOS compatible; low grade heat gradient; microprocessor cooling; microwatt level; power density; power generation; silicon nanowire array; thermoelectric device; thermoelectric energy converter; thermoelectric material; Cooling; Nanowire; Power generation; Silicon; TEC; TEG; Thermoelectric; component;
fLanguage
English
Publisher
ieee
Conference_Titel
IPEC, 2010 Conference Proceedings
Conference_Location
Singapore
ISSN
1947-1262
Print_ISBN
978-1-4244-7399-1
Type
conf
DOI
10.1109/IPECON.2010.5697001
Filename
5697001
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