Title :
A novel design methodology for hybrid process 3D-IC
Author :
Huang, Chien-Lin ; Chang, Nian-Shyang ; Chen, Chi-Shi ; Lin, Chun-Pin ; Wu, Chien-Ming ; Huang, Chun-Ming
Author_Institution :
Design Service Div., Natioanl Chip Implementation Center (CIC), Hsinchu, Taiwan
Abstract :
Three-dimensional integrated circuit (3D-IC) is considered to be the most promising technology for modern and future electronic devices manufacturing. However, lots of challenges need to be addressed in order to make 3D-IC technically feasible as well as cost effective. One of the major challenges for 3D-IC is electronic design automation (EDA) due to the lack of true 3D EDA tools. In this paper, we propose a novel design methodology which makes current (2D-IC) EDA tools 3D aware. This methodology can be applied to 3D-ICs with the structure of 2 tiers bonded face to face. Since the process node for each tier of the applied 3D-IC can be different, we name it Hybrid Process 3D-IC. Based on the hierarchical design methodology, low power design techniques, flip-chip physical implementation methods, customized cell libraries and scripts are combined together to build up Hybrid Process 3D-IC design methodology. In order to verify the proposed methodology, a real circuit is designed according to it. The detail of the circuit will be described in the following paragraphs.
Keywords :
electronic design automation; flip-chip devices; integrated circuit design; low-power electronics; three-dimensional integrated circuits; 2D-IC EDA tool; 3D EDA tool; cell libraries; circuit design; electronic design automation; electronic device manufacturing; flip-chip physical implementation method; hierarchical design methodology; hybrid process 3D-IC design methodology; low power design technique; three-dimensional integrated circuit; Design methodology; Face; Three dimensional displays; Through-silicon vias; Topology; Very large scale integration; 3D-IC; Design Methodology; Hybrid Process;
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2080-2
DOI :
10.1109/VLSI-DAT.2012.6212640