DocumentCode
2272335
Title
Amorphization of silicon via electronic processes induced by fullerenes irradiations
Author
Canut, B. ; Bonardi, N. ; Ramos, S.M.M. ; Della-Negra, S.
Author_Institution
Dept. de Phys. des Mater., Univ. Claude Bernard, Villeurbanne, France
fYear
1999
fDate
1999
Firstpage
50
Lastpage
52
Abstract
For the first time we show that single crystalline silicon is sensitive to collective electronic excitations. Irradiations with C60 clusters accelerated in the 10 MeV range induce the formation of amorphous latent tracks in this material
Keywords
amorphisation; amorphous semiconductors; elemental semiconductors; ion beam effects; silicon; 10 MeV; 10 MeV range; C60; C60 clusters; Si; amorphous latent tracks; collective electronic excitations; electronic processes; fullerenes irradiations; Acceleration; Amorphous materials; Crystalline materials; Crystallization; Electrons; Energy loss; Particle beams; Projectiles; Silicon; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858544
Filename
858544
Link To Document