Title :
Oxide charge modeling with CEA-TRAPPOX code version 4. Comparison of trapping models on desktop computer
Author :
Leray, Jean-Luc ; Paillet, Philippe ; Flament, Olivier ; Torrès, Alphonse
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
The charge trapped in oxides depends on a large number of parameters (spatial and energetic distributions of traps, voltage and dose-rate profiles, internal space-charge effect, etc.). We demonstrate that 1D simulations with personal computers can be effective in extracting oxide parameters from experimental data, thus enabling prediction of MOS degradation in various mission profiles
Keywords :
MIS devices; semiconductor device models; CEA-TRAPPOX code version 4; MOS degradation; desktop computer; dose-rate profiles; internal space-charge effect; oxide charge modeling; voltage; Charge carrier density; Charge carrier processes; Degradation; Distributed computing; Electron traps; Equations; Interface states; MOSFETs; Spontaneous emission; Voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858546
