Title :
Charge-collection efficiency of GaAs field effect transistors fabricated with a low-temperature grown buffer layer: dependence on charge deposition profile
Author :
McMorrow, Dale ; Knudson, Alvin R. ; Melinger, Joseph S. ; Buchner, Stephen
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The dependence of the charge-collection processes of LT GaAs field-effect transistors on the depth profile of the deposited carriers is examined using computer simulation and laser-induced charge-collection measurements. The charge-collection simulations reveal a surprising dependence of the charge-collection efficiency on the location of the deposited charge, such that the charge-collection efficiency is largest for charge deposition below the LT GaAs buffer layer. These results implicate the significant role of charge-enhancement phenomena in the charge-collection processes of LT GaAs FETs. Experimental measurements performed as a function of the optical penetration depth support the conclusions of the simulation study
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; GaAs; GaAs field effect transistors; charge deposition profile; charge-collection efficiency; charge-collection processes; depth profile; laser-induced charge-collection measurements; low-temperature grown buffer layer; Buffer layers; Computational modeling; Computer simulation; Current measurement; FETs; Gallium arsenide; MESFETs; Physics; Pulsed laser deposition; Temperature;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858547