Title :
Electroplated metallization method for crystalline silicon solar cells
Author :
Gao, Jie ; Li, Ming ; Mao, Dali
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
Electroplating metallization method for crystalline silicon solar cell was investigated with new diffusion barrier layer, Ni, crystalline NiW (c-NiW), amorphous NiW (a-NiW). After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the Cu diffusion barrier performance. The rapid increase in sheet resistance of Ni/Cu contact indicated that Ni has the worst diffusion barrier property. XRD analysis revealed that Cu atoms can hardly diffuse through a-NiW barrier layer. However, a-NiW layer has high resistivity, which may influence the solar cell efficiency.
Keywords :
X-ray diffraction; electroplating; metallisation; silicon compounds; solar cells; XRD analysis; crystalline silicon solar cells; diffusion barrier layer; electroplated metallization method; sheet resistance; Annealing; Copper; Metallization; Nickel; Photovoltaic cells; Resistance; Silicon;
Conference_Titel :
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-8140-8
DOI :
10.1109/ICEPT.2010.5582336
