DocumentCode
2272397
Title
Electroplated metallization method for crystalline silicon solar cells
Author
Gao, Jie ; Li, Ming ; Mao, Dali
Author_Institution
Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2010
fDate
16-19 Aug. 2010
Firstpage
310
Lastpage
313
Abstract
Electroplating metallization method for crystalline silicon solar cell was investigated with new diffusion barrier layer, Ni, crystalline NiW (c-NiW), amorphous NiW (a-NiW). After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the Cu diffusion barrier performance. The rapid increase in sheet resistance of Ni/Cu contact indicated that Ni has the worst diffusion barrier property. XRD analysis revealed that Cu atoms can hardly diffuse through a-NiW barrier layer. However, a-NiW layer has high resistivity, which may influence the solar cell efficiency.
Keywords
X-ray diffraction; electroplating; metallisation; silicon compounds; solar cells; XRD analysis; crystalline silicon solar cells; diffusion barrier layer; electroplated metallization method; sheet resistance; Annealing; Copper; Metallization; Nickel; Photovoltaic cells; Resistance; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4244-8140-8
Type
conf
DOI
10.1109/ICEPT.2010.5582336
Filename
5582336
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