Title :
Preparation, structural and morphological properties of nanostructure ZnO films by sol gel spin coating
Author :
Caglar, Mujdat ; Ruzgar, Serif
Author_Institution :
Anadolu Univ., Eskisehir, Turkey
fDate :
June 30 2014-July 4 2014
Abstract :
In preset study, the sol-gel method was used to deposit ZnO films and silicon substrates were used as substrate. The effects of deposition temperature on the structural and morphological properties of ZnO films were investigated. X-ray diffraction (XRD) measurement showed that the ZnO films were crystallized in the hexagonal wurtzite phase and presented a preferential orientation along the c-axis. The current-voltage (I-V) characteristics of the diode were performed using a KEITHLEY 2400 sourcemeter. The pn heterojunction diode was fabricated and the diode parameters were determined from the analysis of the measured dark current-voltage curves. Rectifying behavior was observed from the I-V characteristics of these heterojunction diodes.
Keywords :
II-VI semiconductors; X-ray diffraction; dark conductivity; elemental semiconductors; nanostructured materials; p-n heterojunctions; rectification; semiconductor thin films; silicon; sol-gel processing; spin coating; surface treatment; zinc compounds; Si; X-ray diffraction; XRD measurement; ZnO; ZnO film deposition; ZnO film morphological properties; ZnO film preparation; ZnO film structural properties; dark current-voltage curves; deposition temperature effects; diode current-voltage characteristics; diode parameters; hexagonal wurtzite phase; nanostructured ZnO films; p-n heterojunction diode; rectifying behavior; silicon substrates; sol-gel spin coating; sourcemeter measurements; Coatings; Light emitting diodes; Substrates; Temperature; Temperature measurement; X-ray scattering; Zinc oxide;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
DOI :
10.1109/IVESC.2014.6891960
