Title :
Structural properties and electrical characteristics of high-k GdTiO3 gate dielectrics for InGaZnO thin-film transistors
Author :
Ching-Hung Chen ; Jim-Long Her ; Tung-Ming Pan ; Fu-Chien Chiu ; Koyama, Koichi
Author_Institution :
Chang Gung Univ., Taoyuan, Taiwan
fDate :
June 30 2014-July 4 2014
Abstract :
We investigated the structural properties and electrical characteristics of GdTiO3 dielectrics for IGZO TFT devices. We used XRD, XPS, and AFM to examine the structural, compositional, and morphological features of the GdTiO3 film, respectively. The IGZO TFT featuring a GdTiO3 gate dielectric exhibited a large field-effect mobility of 32.3 cm2/V-s, a small threshold voltage of 0.14 V, a high Ion/Ioff current ratio of 4.2 × 108, and a low subthreshold swing of 213 mV/decade.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; atomic force microscopy; gadolinium compounds; gallium compounds; high-k dielectric thin films; indium compounds; semiconductor-insulator boundaries; surface morphology; thin film transistors; zinc compounds; AFM; GdTiO3; GdTiO3 film; IGZO TFT devices; InGaZnO thin-film transistors; InGaZnO-GdTiO3; Ion-Ioff current ratio; X-ray diffraction; X-ray photoelectron spectra; XPS; XRD; atomic force microscopy; compositional features; electrical characteristics; field-effect mobility; high-k GdTiO3 gate dielectrics; morphological features; structural features; structural properties; subthreshold swing; threshold voltage; voltage 0.14 V; Dielectrics; Educational institutions; Logic gates; Thin film transistors; Threshold voltage; X-ray scattering;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
DOI :
10.1109/IVESC.2014.6891962
