DocumentCode :
2272498
Title :
Optimised stacked RADFETs for micro-gray dose measurement
Author :
Connell, Barry O. ; McCarthy, Chris ; Lane, Bill ; Mohammadzadeh, Ali
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
fYear :
1999
fDate :
1999
Firstpage :
101
Lastpage :
105
Abstract :
This paper details the improvements in the design of stacked RADFETs for lower initial (pre-irradiation) output voltage (Vo) magnitude as well as increased radiation sensitivity. The issue of high read-out voltage has been shown to be a drawback. It is the body (bulk) effect factor that is responsible for the increased overall stack threshold voltage (VT), which is greater than the sum of the individual devices VT. This same body effect is the factor responsible for increased radiation sensitivity of stacked devices. From extensive process and device simulation and resultant circuit simulation, modified stack structures have been proposed and designed. New results of lower initial (preirradiation) output voltage as well as increased radiation sensitivity are presented here. Results in this work show radiation sensitivity values of 8.5 mV/mGy achieved with 15 stacked devices of 3060/13 W/L (μm) geometry, with an initial output voltage of <10 V
Keywords :
MOSFET; dosimeters; nondestructive readout; radiation monitoring; sensitivity analysis; 5 to 20 V; 50 to 250 muGy; body effect factor; bulk effect factor; micro-gray dose measurement; modified stack structures; optimised stacked RADFETs; preirradiation output voltage; radiation dosimeter; radiation sensitivity; read-out voltage; Circuit simulation; Design optimization; Equations; Geometry; Ionizing radiation; Joining processes; Microelectronics; Radiation detectors; Stacking; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
Type :
conf
DOI :
10.1109/RADECS.1999.858553
Filename :
858553
Link To Document :
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