Variable gain active predistorter with linearity enhancement for a 2.4 GHz SiGe HBT power amplifier design

Author

Lin, Kuei-Cheng ; Chiou, Hwann-Kaeo ; Wu, Po-Chang ; Sha, Chu-Jung ; Ko, Chun-Lin ; Chang, Da-Chiang ; Juang, Ying-Zong

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2012

fDate

23-25 April 2012

Firstpage

1

Lastpage

4

Abstract

This paper proposes a 2.4 GHz SiGe HBT differential power amplifier (PA) with a novel on-chip variable gain active predistorter (PD) for linearity enhancement. The fully differential active PD provides an open collector adaptive bias control which can effectively enhance the linearity while improve power added efficiency (PAE). The PA with active PD achieves an output 1-dB compression (OP1dB) of 20 dBm, a gain control range of 10 dB, a PAE of 30%, and an error vector magnitude (EVM) improvement of 2.4 % under OFDM/64-QAM modulation signal. The fabricated die size including pads is less than 0.74 mm² and suitable for highly integrated linear PA.

Keywords

OFDM modulation; heterojunction bipolar transistors; power amplifiers; quadrature amplitude modulation; silicon compounds; OFDM/64-QAM modulation signal; SiGe; SiGe HBT power amplifier design; differential active PD; error vector magnitude; frequency 2.4 GHz; linearity enhancement; on-chip variable gain active predistorter; open collector adaptive bias control; power added efficiency; Gain; Heterojunction bipolar transistors; Linearity; OFDM; Power amplifiers; Silicon germanium; Active predistorter; SiGe HBT; error vector magnitude (EVM); power added efficiency (PAE); power amplifier (PA);

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on

Conference_Location

Hsinchu

ISSN

PENDING

Print_ISBN

978-1-4577-2080-2

Type

conf

DOI

10.1109/VLSI-DAT.2012.6212650

Filename

6212650