DocumentCode :
227256
Title :
Tunnel current in the presence of nanosized film at the cathode
Author :
Davidovich, M.V. ; Bushuev, N.A. ; Yafarov, R.K.
Author_Institution :
Saratov State Univ., Saratov, Russia
fYear :
2014
fDate :
June 30 2014-July 4 2014
Firstpage :
1
Lastpage :
1
Abstract :
We use the classic approach to get the quantum mechanical potential, and consider the field emission in a flat vacuum diode with size d and thin dielectric film with sufficient permittivity. Using the potential in the form of series of images we have calculated the forms of potential barriers at different film thicknesses and voltages at the anode. It can be explained by the fact that the film reduces the intensity of a field.
Keywords :
cathodes; dielectric thin films; diodes; electron field emission; nanostructured materials; permittivity; vacuum microelectronics; cathode; field emission; flat vacuum diode; nanosized film; permittivity; quantum mechanical potential; thin dielectric film; tunnel current; Anodes; Cathodes; Dielectrics; Electric potential; Elementary particle vacuum; Permittivity; Quantum mechanics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
Type :
conf
DOI :
10.1109/IVESC.2014.6891967
Filename :
6891967
Link To Document :
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