Near electric field mapping above X-Band MMICs using modulated scattering

Author

Budka, T.P. ; Waclawik, S.D. ; Rebeiz, G.M.

Author_Institution

Dept. of Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1703

Abstract

This paper presents near electric field measurements above a directional coupler at 10 GHz and a Texas Instruments 2-20 GHz TGA8310-SCC distributed low noise amplifier at 14.5 GHz. The measurements are performed with a low cost modulated scattering system using 100 /spl mu/m long monopole probes with monolithically integrated Schottky diodes on a 40 /spl mu/m thick high resistivity silicon substrate. Normal electric field intensity and phase maps are presented and demonstrates the possibility of using this mapping technique for low cost MMIC diagnostics.

Keywords

MMIC; MMIC amplifiers; directional couplers; distributed amplifiers; electric field measurement; electromagnetic wave scattering; integrated circuit measurement; microwave measurement; 10 GHz; 14.5 GHz; 2 to 20 GHz; Si; Texas Instruments TGA8310-SCC distributed low noise amplifier; X-Band MMIC diagnostics; directional coupler; high resistivity silicon substrate; modulated scattering; monolithically integrated Schottky diode; monopole probe; near electric field mapping; Costs; Directional couplers; Distributed amplifiers; Electric variables measurement; Instruments; Low-noise amplifiers; MMICs; Noise measurement; Performance evaluation; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512269

Filename

512269