DocumentCode
2272662
Title
Accurate modeling of noise fluctuations in mm-wave semiconductor devices and their spatial and frequency dependence
Author
Abou-Elnour, A. ; Schunemann, K.
Author_Institution
Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Germany
Volume
3
fYear
1996
fDate
17-21 June 1996
Firstpage
1719
Abstract
A rigorous model is developed to determine the noise fluctuations in millimeter-wave semiconductor devices and their spatial and frequency dependence. First the model is generally described and then it is applied to characterize the operation and to accurately interpret the noise performance of sub-quarter micrometer gate-length FETs by making use of the noise matrix which describes the noise fluctuations in the different device regions and electrodes and their correlations.
Keywords
millimetre wave field effect transistors; semiconductor device models; semiconductor device noise; 0.25 micron; FET; frequency dependence; millimeter-wave semiconductor device; model; noise fluctuations; noise matrix; spatial dependence; Electrodes; Fluctuations; Gallium arsenide; Microwave Theory and Techniques Society; Poisson equations; Scattering; Semiconductor device noise; Semiconductor devices; Strontium; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.512273
Filename
512273
Link To Document