DocumentCode :
2272705
Title :
Impact of temperature cycling on copper interconnect
Author :
Lin Xiao-ling ; Hou Tong-xian ; Xiao-Wen, Zhang ; Yao Ruo-he
Author_Institution :
Inst. of Microelectron., South China Univ. of Technol., Guangzhou, China
fYear :
2010
fDate :
16-19 Aug. 2010
Firstpage :
368
Lastpage :
370
Abstract :
Temperature cycling is widely used as a qualification test in the microelectronic industry. This paper investigates an intriguing failure mode observed in such a test. FIB cross-section of test structure and SEM observation were performed for in-situ morphology analysis before and after temperature cycling. It was found that copper films surface morphology damaged substantially. Extrusions and voids were found in these films. Then, a two-dimensional finite element analysis was used to analyze the stress distribution in the test structure, taking into account the thermo-mechanical confinement effect after temperature cycling. Finally, the concept of ratcheting was used to explain fatigue phenomenon of Cu line structures.
Keywords :
copper; extrusion; finite element analysis; integrated circuit interconnections; temperature; voids (solid); copper film surface morphology; copper interconnect; extrusions; failure mode; fatigue phenomenon; microelectronic industry; morphology analysis; ratcheting; stress distribution; temperature cycling; test structure; thermo-mechanical confinement effect; two-dimensional finite element analysis; voids; Copper; Films; Mathematical model; Plastics; Strain; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-8140-8
Type :
conf
DOI :
10.1109/ICEPT.2010.5582352
Filename :
5582352
Link To Document :
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