• DocumentCode
    2272705
  • Title

    Impact of temperature cycling on copper interconnect

  • Author

    Lin Xiao-ling ; Hou Tong-xian ; Xiao-Wen, Zhang ; Yao Ruo-he

  • Author_Institution
    Inst. of Microelectron., South China Univ. of Technol., Guangzhou, China
  • fYear
    2010
  • fDate
    16-19 Aug. 2010
  • Firstpage
    368
  • Lastpage
    370
  • Abstract
    Temperature cycling is widely used as a qualification test in the microelectronic industry. This paper investigates an intriguing failure mode observed in such a test. FIB cross-section of test structure and SEM observation were performed for in-situ morphology analysis before and after temperature cycling. It was found that copper films surface morphology damaged substantially. Extrusions and voids were found in these films. Then, a two-dimensional finite element analysis was used to analyze the stress distribution in the test structure, taking into account the thermo-mechanical confinement effect after temperature cycling. Finally, the concept of ratcheting was used to explain fatigue phenomenon of Cu line structures.
  • Keywords
    copper; extrusion; finite element analysis; integrated circuit interconnections; temperature; voids (solid); copper film surface morphology; copper interconnect; extrusions; failure mode; fatigue phenomenon; microelectronic industry; morphology analysis; ratcheting; stress distribution; temperature cycling; test structure; thermo-mechanical confinement effect; two-dimensional finite element analysis; voids; Copper; Films; Mathematical model; Plastics; Strain; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-8140-8
  • Type

    conf

  • DOI
    10.1109/ICEPT.2010.5582352
  • Filename
    5582352