DocumentCode
2272721
Title
Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility
Author
Jones, R. ; Chugg, A.M. ; Jones, C.M.S. ; Duncan, P.H. ; Dyer, C.S. ; Sanderson, C.
Author_Institution
Radiation Effects Group, Matra BAe Dynamics, UK
fYear
1999
fDate
1999
Firstpage
148
Lastpage
153
Abstract
A new pulsed laser facility has been developed to extend laser testing techniques to generate upset cross-section curves. The objective has been to establish an economical laser-based bulk screening capability for SEE susceptibility
Keywords
SRAM chips; integrated circuit reliability; integrated circuit testing; laser beam effects; SEE cross-sections; SEE susceptibility; SRAM; laser testing techniques; laser-based bulk screening capability; picosecond pulsed laser facility; upset cross-section curves; Ion beams; Laser theory; Microchip lasers; Neutrons; Optical arrays; Optical control; Optical pulse generation; Optical pulses; Random access memory; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858565
Filename
858565
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