Title :
Circuit-level model for single-event burnout in N-channel power MOSFET´s
Author :
Liu, Jinhong ; Schrimpf, R.D. ; Massengill, Lloyd ; Galloway, Kenneth F. ; Attia, J.
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
Abstract :
Single Event Burnout (SEB) of power MOSFET´s is a catastrophic failure mechanism that is initiated by the passage of a heavy ion through the device. In this paper, an SEB circuit model of the power MOSFET has been developed. The calibrations of model parameters are illustrated. The dependence of SEB sensitivity on various parameters is presented and compared with experimental results. The parasitic resistance and capacitance of the device as well as the circuit parameters contribute to the length of SEB pulse. Increasing the switching frequency of the power MOSFET may be a possible way to prevent SEB in applications
Keywords :
ion beam effects; power MOSFET; semiconductor device models; N-channel power MOSFET; catastrophic failure; circuit model; heavy ion irradiation; parasitic capacitance; parasitic resistance; single event burnout; switching frequency; Breakdown voltage; Calibration; Doping; Electron mobility; Failure analysis; MOSFET circuits; Parasitic capacitance; Pulse circuits; Resistors; Thermal resistance;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858572
