Title :
A realistic large-signal MESFET model for SPICE
Author_Institution :
Dept. Electron., Macquarie Univ., Sydney, NSW, Australia
Abstract :
A large-signal MESFET model, implemented with new techniques, has continuity and rate dependence. These features provide accurate prediction of circuit gain and distortion. The techniques also improve simulation speed. The model has improved descriptions of capacitance and bias dependence. It has small-signal S-parameter accuracy extended to a wide range of operating conditions. This model is now in several simulators including Pspice v6.2.
Keywords :
S-parameters; SPICE; Schottky gate field effect transistors; capacitance; intermodulation; microwave field effect transistors; semiconductor device models; HF S-parameters; Pspice v6.2 simulator; SPICE; bias dependence; capacitance dependence; charge storage model; circuit distortion; circuit gain; continuity dependence; large-signal MESFET model; rate dependence; simulation speed; Capacitance; Circuit simulation; Distortion measurement; Electric breakdown; Frequency; MESFETs; Power dissipation; SPICE; Scattering parameters; Shape control;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512284
