DocumentCode
2272872
Title
A realistic large-signal MESFET model for SPICE
Author
Parker, A.E.
Author_Institution
Dept. Electron., Macquarie Univ., Sydney, NSW, Australia
Volume
3
fYear
1996
fDate
17-21 June 1996
Firstpage
1763
Abstract
A large-signal MESFET model, implemented with new techniques, has continuity and rate dependence. These features provide accurate prediction of circuit gain and distortion. The techniques also improve simulation speed. The model has improved descriptions of capacitance and bias dependence. It has small-signal S-parameter accuracy extended to a wide range of operating conditions. This model is now in several simulators including Pspice v6.2.
Keywords
S-parameters; SPICE; Schottky gate field effect transistors; capacitance; intermodulation; microwave field effect transistors; semiconductor device models; HF S-parameters; Pspice v6.2 simulator; SPICE; bias dependence; capacitance dependence; charge storage model; circuit distortion; circuit gain; continuity dependence; large-signal MESFET model; rate dependence; simulation speed; Capacitance; Circuit simulation; Distortion measurement; Electric breakdown; Frequency; MESFETs; Power dissipation; SPICE; Scattering parameters; Shape control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.512284
Filename
512284
Link To Document