Title :
Relationship between single-event upset immunity and fabrication processes of recent memories
Author :
Nemoto, N. ; Shindou, H. ; Kuboyama, S. ; Itoh, H. ; Matsuda, S. ; Okada, S. ; Nashiyama, I.
Author_Institution :
Nat. Space Dev. Agency of Japan, Tokyo, Japan
Abstract :
Single-Event Upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU rate and structures/fabrication processes. In this experiment, single-ion Multiple-Bit Upsets (MBUs) in 4 Mbit SRAM, 16 Mbit DRAM and 64 Mbit DRAM were observed. These MBUs were also discussed
Keywords :
DRAM chips; SRAM chips; ion beam effects; 16 Mbit; 4 Mbit; 64 Mbit; DRAM; SRAM; fabrication; heavy ion irradiation; memory device; multiple bit upset; single event upset; Assembly; Costs; Fabrication; Lead; Manufacturing; Plastic packaging; Random access memory; Single event upset; Space vehicles; Testing;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858579
