Simulation and experimental results of source harmonic tuning on linearity of power GaAs FET under class AB operation

Author

Watanabe, S. ; Takatuka, S. ; Takagi, K. ; Kuroda, H. ; Oda, Y.

Author_Institution

Dept. Microwave Solid-State, Toshiba Corp., Kawasaki, Japan

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1771

Abstract

Nonlinearity of GaAs FET amplifiers under class AB operation such as an abrupt increase of the output power against the input power can be effectively reduced by suppressing even-order harmonic distortion in the gate RF voltage. In this paper, we demonstrate the effect of the source harmonic tuning and condition for improving the linearity of power GaAs FETs under class AB operation by the source harmonic tuning technique.

Keywords

III-V semiconductors; MMIC power amplifiers; circuit tuning; field effect MMIC; gallium arsenide; harmonic distortion; harmonics; microwave power amplifiers; GaAs; GaAs FET amplifiers; amplifier linearity; class AB operation; distortion suppression; even-order harmonic distortion; gate RF voltage; power GaAs FET; source harmonic tuning; FETs; Gallium arsenide; Harmonic distortion; Operational amplifiers; Power amplifiers; Power generation; Power system harmonics; Radio frequency; Radiofrequency amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512286

Filename

512286