Title :
Effects of heavy ion impact on power diodes
Author :
Busatto, G. ; Iannuzzo, F. ; Wyss, J. ; Pantano, D. ; Bisello, D.
Author_Institution :
DAEIMI, Univ. degli Studi di Cassino, Italy
Abstract :
An experimental study of the bombardment with high energy 28 Si of power diodes is presented, including charge spectra and current waveforms. It is shown that, for biasing voltages beyond a threshold value, a second conspicuous charge population appears. The corresponding waveforms are classified. The threshold value depends on the ion energy. The peak value of the current depends on the applied voltage and may reach values large enough to trigger instabilities inside the diode
Keywords :
ion beam effects; power semiconductor diodes; radiation hardening (electronics); biasing voltages; charge population; charge spectra; current waveforms; heavy ion impact effect; power diodes; Failure analysis; Mesons; Neutrons; Nuclear physics; Protons; Sea level; Semiconductor diodes; Silicon; Telecommunications; Threshold voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858581
