Title :
Performance comparison of MODFET and MESFET using combined electromagnetic and solid-state simulator
Author :
Sohel Imtiaz, S.M. ; Alsunaidi, M.A. ; El-Ghazaly, S.M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
A Combined Electromagnetic and Solid-State (CESS) simulation model for the analysis of electromagnetic wave effects on the behavior of the submicron semiconductor devices is presented. The CESS simulation model couples a 3D time-domain solution of Maxwell´s equations to the semiconductor model. The performance comparison of two important high frequency devices, MODFET and MESFET, are discussed. The electromagnetic wave effects on the two devices are thoroughly analyzed. The simulation uses the electromagnetic wave concept to emphasize the better performance of MODFET over MESFET. The transfer of energy takes place between the electrons and the electromagnetic wave at high frequencies.
Keywords :
Maxwell equations; Schottky gate field effect transistors; electronic engineering computing; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; simulation; time-domain analysis; 3D time-domain solution; CESS simulation model; MESFET; MODFET; Maxwell equations; combined EM/solid-state simulator; electromagnetic simulator; electromagnetic wave effects; high frequency devices; semiconductor model; solid-state simulator; submicron semiconductor devices; Analytical models; Electromagnetic analysis; Electromagnetic devices; Electromagnetic scattering; Frequency; HEMTs; MESFETs; MODFETs; Solid modeling; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512289
