Title :
Generation and confinement of mobile charges in buried oxide of SOI substrates
Author :
Musseau, O. ; Krawiec, S. ; Paillet, Ph ; Courtot-Descharles, A. ; Gruber, O.
Author_Institution :
CEA-DAM/DIF, Bruyeres le Chatel, France
Abstract :
We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. Under standard preparation techniques, both fixed and mobile positive charges are generated in the buried oxide. A series of new experimental data investigates the ratio of fixed to mobile charges. The analysis of charge homogeneity within the sample reveals the basic role of diffusion in the oxide. Experimental data and atomic scale modeling emphasize the importance of Si-SiO2 interface
Keywords :
annealing; buried layers; ion beam effects; silicon-on-insulator; SOI substrates; Si-SiO2; Si-SiO2 interface; buried oxide; hydrogen annealing; mobile charges; Annealing; Atmosphere; Hydrogen; Infrared heating; Nonvolatile memory; Protons; Semiconductor films; Silicon; Temperature; Threshold voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858590
