DocumentCode
2273070
Title
Micro-irradiation experiments in MOS transistors using synchrotron radiation
Author
Autran, J.-L. ; Masson, P. ; Freud, N. ; Raynaud, C. ; Riekel, C.
Author_Institution
Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees de Lyon, Villeurbanne, France
fYear
1999
fDate
1999
Firstpage
256
Lastpage
261
Abstract
Spatially-resolved total-dose degradation has been performed in MOS transistors by focusing X-ray synchrotron radiation on the gate electrode with micrometer resolution. The influence of the resulting permanent degradation on device electrical properties has been analyzed using current-voltage and charge pumping measurements, in concert with optical characterization (photon emission) and quasi-breakdown measurements
Keywords
MOSFET; X-ray effects; semiconductor device breakdown; MOS transistors; X-ray synchrotron radiation; charge pumping; current-voltage characteristics; micrometer resolution; photon emission; quasi-breakdown; spatially-resolved total-dose degradation; Charge measurement; Charge pumps; Current measurement; Degradation; Electric variables measurement; Electrodes; MOSFETs; Spatial resolution; Stimulated emission; Synchrotron radiation;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858591
Filename
858591
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