Roadmap for megawatt class power switch modules utilizing large area silicon carbide MOSFETs and JBS diodes

Recent dramatic advances in the development of large area silicon carbide (SiC) MOSFETs along with their companion JBS diode technology make it possible to design and fabricate high power SiC switch modules. An effort underway by the Air Force Research Laboratory has lead to the development of a 1.2 kV/100 A SiC dual switch power module capable of operating at a junction temperature of 200degC. Two additional efforts are set on achieving the megawatt goal. An effort by the Army Research Laboratory is focused on 1.2 kV modules to be used for traction and power conversion applications. The highest power 1200 V all-SiC dual switch power modules produced is capable of 880 amps. A DARPA effort to develop a solid state power substation has produced a 10 kV/50 A SiC dual switch power module. Higher current modules in both voltage ratings have been designed. These SiC MOSFET modules represent the next level of integration for SiC power devices. This is a critical technical milestone in the progression toward highly reliable, high efficiency, power systems. This technology is relevant in the current energy-conscious environment and will translate to significant energy savings for hybrid and electric vehicles, solar power and alternative energy system inverters, and industrial motor drives.