DocumentCode
2273126
Title
Spatial and spectral oxide trap distributions in power MOSFETs
Author
Torres, A. ; Flament, O. ; Marcandella, C. ; Musseau, O. ; Leray, J.L.
Author_Institution
CEA/DAM, Bruyeres-Le-Chatel, France
fYear
1999
fDate
1999
Firstpage
269
Lastpage
273
Abstract
Charge trapping features of a power MOSFET oxide are investigated by irradiation and post irradiation methods. We determine the spectral and the spatial trap distribution in the oxide of four hardened and unhardened devices. One unhardened device seems to present a trapping behavior close to the SIMOX buried oxide one
Keywords
annealing; electron traps; hole traps; power MOSFET; radiation effects; Si-SiO; charge trapping; hardened device; oxide trap distributions; post irradiation methods; power MOSFET; spatial trap distribution; spectral trap distribution; unhardened device; Annealing; Breakdown voltage; Current measurement; Electron traps; Ionizing radiation; MOSFETs; Manufacturing; Temperature; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858593
Filename
858593
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