Title :
4H-SiC MESFETs behavior after high dose irradiation
Author :
Brisset, C. ; Noblanc, O. ; Picard, C. ; Joffre, F. ; Brylinski, C.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
Abstract :
This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate
Keywords :
Schottky gate field effect transistors; gamma-ray effects; silicon compounds; wide band gap semiconductors; 4H-SiC; MESFET; SiC; dose response; electrically active defects; high dose irradiation; semi-insulating substrate; total dose level; Buffer layers; Fabrication; Frequency; Insulation; MESFETs; Semiconductor materials; Silicon carbide; Substrates; Temperature; Testing;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858597
