DocumentCode
2273213
Title
4H-SiC MESFETs behavior after high dose irradiation
Author
Brisset, C. ; Noblanc, O. ; Picard, C. ; Joffre, F. ; Brylinski, C.
Author_Institution
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
fYear
1999
fDate
1999
Firstpage
289
Lastpage
294
Abstract
This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate
Keywords
Schottky gate field effect transistors; gamma-ray effects; silicon compounds; wide band gap semiconductors; 4H-SiC; MESFET; SiC; dose response; electrically active defects; high dose irradiation; semi-insulating substrate; total dose level; Buffer layers; Fabrication; Frequency; Insulation; MESFETs; Semiconductor materials; Silicon carbide; Substrates; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858597
Filename
858597
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