DocumentCode
2273240
Title
Radiation damage in AlGaAs/GaAs pseudomorphic HEMTs
Author
Ohyama, Hirofumi ; Simoen, E. ; Kuroda, S. ; Claeys, C. ; Takami, Y. ; Hakata, T. ; Hayama, K. ; Tajiri, T. ; Nakabayashi, M. ; Kobayashi, K. ; Yoneoka, M. ; Sunage, H.
Author_Institution
Kumamoto Nat. Coll. of Technol., Japan
fYear
1999
fDate
1999
Firstpage
295
Lastpage
298
Abstract
The degradation of AlGaAs/GaAs pseudomorphic HEMTs by 220-MeV carbon, 1-MeV electron and neutron irradiation and their recovery by subsequent isochronal annealing are investigated and compared with results obtained on irradiated InGaP/InGaAs p-HEMTs
Keywords
III-V semiconductors; aluminium compounds; annealing; electron beam effects; gallium arsenide; high electron mobility transistors; neutron effects; 1 MeV; 220 MeV; AlGaAs-GaAs; electron irradiation; isochronal annealing; neutron irradiation; pseudomorphic HEMTs; radiation damage; Annealing; Degradation; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Neutrons; PHEMTs; Satellite broadcasting;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858598
Filename
858598
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