Title :
Hybrid photo-receiver based on SiGe heterojunction photo-transistor for low-cost 60 GHz intermediate-frequency radio-over-fibre applications
Author :
Viana, C. ; Tegegne, Z.G. ; Rosales, M. ; Polleux, J.L. ; Algani, C. ; Lecocq, V. ; Lyszyk, C. ; Denet, S.
Author_Institution :
Univ. Paris-Est, Noisy-le-Grand, France
Abstract :
The first results of an integrated hybrid photo-receiver based on a 850 nm two-terminal (2T) silicon germanium (SiGe) heterojunction bipolar photo-transistor (HPT) for low-cost radio-over-fibre (RoF) applications is presented. A hybrid module was realised with two cascaded low-noise amplifiers of 20 dB total gain and an SiGe 2T-HPT exhibiting a -15 dB opto-microwave gain at 5.15 GHz with a 1.6 GHz bandwidth. A 16% degradation of the error vector magnitude compared with back-to-back measurement for the transmission of a 2 GHz OFDM signal at 3 Gbit/s was measured based on the 60 GHz IEEE 802.15.3c standard transposed at the intermediate frequency (IF) of 5 GHz, according to an IF-RoF distribution mode.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; low noise amplifiers; millimetre wave amplifiers; millimetre wave bipolar transistors; optical receivers; phototransistors; radio-over-fibre; 2T SiGe HPT; EVM; IEEE 802.15.3c standard; IF-RoF distribution mode; LNA; OFDM signal; SiGe; bandwidth 1.6 GHz; bit rate 3 Gbit/s; cascaded low-noise amplifier; error vector magnitude; frequency 2 GHz; frequency 5 GHz; frequency 5.15 GHz; frequency 60 GHz; gain -15 dB; gain 20 dB; integrated hybrid photoreceiver; intermediate-frequency radio-over-fibre application; size 850 nm; two-terminal silicon germanium heterojunction bipolar photo-transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.0062
