Title :
Radiation tolerance of NPN bipolar technology with 30 GHz Ft
Author :
Flament, O. ; Synold, S. ; de Pontcharra, J. ; Niel, S.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
The tolerance to both ionizing dose and displacement damage of a Quasi-Self Aligned (QSA) single polysilicon emitter bipolar technology fabricated with a 0.35 μm design rules CMOS is presented. In this work we explore the effect of dose rate, high dose level irradiation and elevated temperature irradiation on the electrical performance of single polysilicon bipolar transistors. The different results are discussed and comparison with previous are presented to place the technology with respect to others
Keywords :
bipolar integrated circuits; bipolar transistors; high-speed integrated circuits; integrated circuit reliability; radiation effects; silicon; 0.35 micron; 30 GHz; CMOS design rules; NPN bipolar technology; Si; bipolar transistors; displacement damage; dose rate; electrical performance; elevated temperature irradiation; high dose level irradiation; ionizing dose; n-p-n bipolar technology; quasi-self aligned bipolar technology; radiation tolerance; single polysilicon emitter bipolar technology; Bipolar transistors; CMOS technology; Degradation; Doping; Frequency; Germanium silicon alloys; Ionizing radiation; Isolation technology; Silicon germanium; Temperature;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858615
