Title :
I-V and Gain Characteristics of Electrowetting-Based Liquid Field Effect Transistor
Author :
Kim, Duk Young ; Herman, Stephen ; Steckl, Andrew J.
Author_Institution :
Lab. of Nanoelectron., Cincinnati Univ., Cincinnati, OH
Abstract :
This work presents an electrowetting-based liquid state field effect transistor (liquiFET) consisting of glass substrate, an Al2O3-covered transparent ground electrode (ITO), source and drain metal contacts (ITO), a hydrophobic insulator (amorphous fluoropolymer), a hydrophobic/hydrophilic grid (Kapton/SU-8), two fluids (electrolyte/oil), and top gate electrode (Au wire). The I-V characteristics and transconductance of the liquiFET are measured and the electrostatic field distribution inside the device is simulated.
Keywords :
alumina; electrolytes; field effect transistors; gold; indium compounds; liquid films; microfluidics; oils; polymer films; semiconductor device models; wetting; Al2O3-ITO-Au; Al2O3-covered transparent ground electrode; I-V characteristics; SiO2; amorphous fluoropolymer; drain metal contact; electrolyte-oil fluid; electrostatic field distribution; electrowetting-based liquid field effect transistor; gain characteristics; glass substrate; gold wire top gate electrode; hydrophobic insulator; hydrophobic-hydrophilic grid; liquiFET; microfluidic device; source metal contact; transconductance; Amorphous materials; Cable insulation; Dielectric liquids; Electrodes; FETs; Glass; Indium tin oxide; Metal-insulator structures; Oil insulation; Petroleum;
Conference_Titel :
University/Government/Industry Micro/Nano Symposium, 2008. UGIM 2008. 17th Biennial
Conference_Location :
Louisville, KY
Print_ISBN :
978-1-4244-2484-9
Electronic_ISBN :
978-1-4244-2485-6
DOI :
10.1109/UGIM.2008.8
