Title :
Total dose hardness of a commercial SiGe BiCMOS technology
Author :
Van Vonno, N. ; Lucas, Robert ; Thornberry, David
Author_Institution :
Intersil Corp., Melbourne, FL, USA
Abstract :
Over the past decade SiGe HBT technology has progressed from the laboratory to practical commercial applications. When integrated into a CMOS process, this technology has potential applications in low-cost space systems. In this paper, we report results of total ionizing dose testing of a SiGe/CMOS process accessible through a commercial foundry
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit technology; integrated circuit testing; radiation hardening (electronics); semiconductor materials; SiGe; SiGe BiCMOS technology; SiGe HBT/CMOS process; commercial BiCMOS technology; low-cost space systems; total dose hardness; total ionizing dose testing; BiCMOS integrated circuits; CMOS process; CMOS technology; Foundries; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Silicon germanium; Space technology; Testing;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858617
