• DocumentCode
    2273642
  • Title

    Proton damage in linear and digital optocouplers

  • Author

    Johnston, A.H. ; Rax, B.G.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    437
  • Lastpage
    443
  • Abstract
    Fundamental differences in design influence the way that linear and digital optocouplers are degraded by radiation. Linear optocouplers are more affected by current drive conditions because the detector operates in a high-injection region when the LED produces normal light output, and do not have the extra operating margin that is inherent in digital optocouplers. Although LED degradation is often the dominant degradation mechanism in space environments, degradation of optocouplers with improved LEDs is limited by photoresponse degradation. Phototransistor gain has a relatively minor effect except at very high radiation levels
  • Keywords
    light emitting diodes; opto-isolators; proton effects; LED degradation; current drive conditions; digital optocouplers; high-injection region; linear optocouplers; photoresponse degradation; phototransistor gain; proton damage; Degradation; Laboratories; Light emitting diodes; Manufacturing; Phototransistors; Photovoltaic cells; Propulsion; Protons; Radiation hardening; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
  • Conference_Location
    Fontevraud
  • Print_ISBN
    0-7803-5726-4
  • Type

    conf

  • DOI
    10.1109/RADECS.1999.858621
  • Filename
    858621