DocumentCode
2273642
Title
Proton damage in linear and digital optocouplers
Author
Johnston, A.H. ; Rax, B.G.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
1999
fDate
1999
Firstpage
437
Lastpage
443
Abstract
Fundamental differences in design influence the way that linear and digital optocouplers are degraded by radiation. Linear optocouplers are more affected by current drive conditions because the detector operates in a high-injection region when the LED produces normal light output, and do not have the extra operating margin that is inherent in digital optocouplers. Although LED degradation is often the dominant degradation mechanism in space environments, degradation of optocouplers with improved LEDs is limited by photoresponse degradation. Phototransistor gain has a relatively minor effect except at very high radiation levels
Keywords
light emitting diodes; opto-isolators; proton effects; LED degradation; current drive conditions; digital optocouplers; high-injection region; linear optocouplers; photoresponse degradation; phototransistor gain; proton damage; Degradation; Laboratories; Light emitting diodes; Manufacturing; Phototransistors; Photovoltaic cells; Propulsion; Protons; Radiation hardening; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858621
Filename
858621
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