Title :
Radiation effects in ultraviolet sensitive SiC photodiodes
Author :
Metzger, S. ; Henschel, H. ; Kohn, O. ; Lennartz, W.
Author_Institution :
Fraunhofer-INT, Euskirchen, Germany
Abstract :
We tested SiC photodiodes with Co-60 gammas, 32 MeV protons and 14 MeV neutrons. The UV-photocurrent decreased to about 50% of its initial value at a total gamma dose of 40 kGy (Air). Nearly the same decrease was observed during proton irradiations of 9×1012 cm -2. But after a neutron fluence of 1.5×1013 cm-2 the signal was still 85% of that before irradiation. It is shown that the decrease of the photocurrent is caused by darkening of the glass window. Some of the colour-centres could be annealed with the intense UV-light of a deuterium lamp. Furthermore hydrogen treatment of the photodiode reduces the radiation effects by about 20%
Keywords :
annealing; gamma-ray effects; neutron effects; photodiodes; proton effects; semiconductor materials; silicon compounds; ultraviolet detectors; 14 MeV; 32 MeV; 40 kGy; SiC; UV-photocurrent; colour-centre annealing; gamma ray effects; glass window darkening; hydrogen treatment; neutron effects; proton effects; ultraviolet sensitive photodiodes; Annealing; Glass; Neutrons; Photoconductivity; Photodiodes; Protons; Radiation effects; Silicon carbide; Testing; Windows;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858624
