Title :
Field emission of composite cathodes with nanostructurad emitting surface
Author :
Lupehin, S.M. ; Ibragimov, A.A.
Author_Institution :
State Univ. of Telecommun. prof. M.A. Bonch-Bruevich, St. Petersburg, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
The field emission of composite Cu-C and Si-C cathodes with a flat nanostructured emission surface was experimentally investigated. The diameter of the emission surface 4 mm. Formation of the emission surface was carried out using the original method of the surface modification [1]. Electron emission currentat operating voltages 1.1-5.8 kV and a anode-cathode distance 0.5 mm was measured. The volt-ampere characteristics were constructed and analyzed. During the investigations it was established hat in the range of operating voltages the emission current is 5-300 μA for Cu - C cathode and 10-840μA for Si-C cathode. The pressure of residual gas P = 10-5-10-7 Torr. The structure and elemental composition of the emission surface with the help of REM and AFM was studied.
Keywords :
atomic force microscopy; carbon; cathodes; composite materials; copper; electron field emission; nanostructured materials; silicon; surface structure; AFM; Cu-C; REM; Si-C; anode-cathode distance; composite Cu-C cathodes; composite Si-C cathodes; composite cathodes; current 10 muA to 840 muA; current 5 muA to 300 muA; distance 0.5 mm; electron emission current; elemental composition; emission surface diameter; emission surface formation; field emission; flat nanostructured emission surface; nanostructurad emitting surface; residual gas pressure; size 4 mm; surface modification; volt-ampere characteristics; voltage 1.1 kV to 5.8 kV; Cathodes; Educational institutions; Electron beams; Electron emission; Electronic mail; Telecommunications; Voltage measurement;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
DOI :
10.1109/IVESC.2014.6892026
