Title :
Inversion-Type Enhancement-Mode InP Mosfets with ALD High-K Al2O3 and HFO2 as Gate Dielectrics
Author :
Wu, Y.Q. ; Xu, M. ; Xuan, Y. ; Ye, P.D. ; Li, J. ; Cheng, Z. ; Lochtefeld, A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect-transistors (MOSFETs) with 0.75 to 40 mum gate length fabricated on semi-insulating substrates and p-type doped InP epi-layers with atomic-layer-deposited (ALD) Al2O3 and HfO2 as gate dielectrics are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high- quality gate oxides and unpinning of Fermi-level on compound semiconductors. A 1-mum gate-length E-mode n- channel MOSFET with a HfO2 gate oxide thickness of 10 nm shows a maximum drain current of 130 mA/mm and a trans- conductance of 40 mS/mm at the highest gate bias of 6 V.
Keywords :
Fermi level; III-V semiconductors; MOSFET; aluminium compounds; atomic layer deposition; dielectric materials; hafnium compounds; indium compounds; Al2O3; Fermi-level; HfO2; III-V compound semiconductors; InP; atomic-layer-deposited; gate dielectrics; high- quality gate oxides; inversion-type enhancement-mode MOSFET; n-channel metal-oxide-semiconductor field-effect-transistors; semi-insulating substrates; Aluminum oxide; Dielectric substrates; Fabrication; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; III-V semiconductor materials; Indium phosphide; MOSFETs; Temperature;
Conference_Titel :
University/Government/Industry Micro/Nano Symposium, 2008. UGIM 2008. 17th Biennial
Conference_Location :
Louisville, KY
Print_ISBN :
978-1-4244-2484-9
Electronic_ISBN :
978-1-4244-2485-6
DOI :
10.1109/UGIM.2008.20
