DocumentCode
2273796
Title
A low cost and low power silicon npn bipolar process with NMOS transistors and its wireless applications
Author
O, K. ; Tewksbury, T. ; Dawe, G. ; Tsai, C. ; Garone, P. ; Scharf, B. ; Kermarrec, C. ; Yasaitis, J.
Author_Institution
Analog Devices Inc., Wilmington, MA, USA
fYear
1995
fDate
20-22 Feb. 1995
Firstpage
93
Lastpage
98
Abstract
Microwave and dc characteristics, and wireless applications of a low cost and low power silicon bipolar process with NMOS transistors are described. The process features 25-GHz double-polysilicon self-aligned npn bipolar transistors with 5.5-V BV/sub CEO/, optional 0.7-/spl mu/m NMOS transistors with p/sup +/ polysilicon gate for switch applications, lateral pnp transistors, high and low valued resistors, inductors, and p/sup +/ polysilicon-to-n/sup +/ plug capacitors. The RF and microwave capabilities of the process up to several GHz are demonstrated by fabricating and characterizing RF amplifiers, low noise amplifiers, and RF switches.
Keywords
BIMOS integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; bipolar MMIC; elemental semiconductors; field effect transistor switches; integrated circuit technology; microwave amplifiers; silicon; 0.7 micron; 2.4 GHz; 25 GHz; 5.5 V; 800 MHz; 900 MHz; DC characteristics; NMOS transistors; RF amplifiers; RF capabilities; RF switches; Si; Si npn bipolar process; UHF; double-polysilicon self-aligned npn bipolar transistors; fabrication; lateral pnp transistors; low cost process; low noise amplifiers; low power; microwave capabilities; microwave characteristics; p/sup +/ polysilicon gate; p/sup +/ polysilicon-to-n/sup +/ plug capacitors; switch applications; wireless applications; Bipolar transistors; Costs; MOS devices; MOSFETs; Microwave transistors; Radio frequency; Radiofrequency amplifiers; Resistors; Silicon; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Technologies for Wireless Applications Digest, 1995., MTT-S Symposium on
Conference_Location
Vancouver, BC, Canada
Print_ISBN
0-7803-1982-6
Type
conf
DOI
10.1109/MTTTWA.1995.512332
Filename
512332
Link To Document