Title :
A low cost and low power silicon npn bipolar process with NMOS transistors and its wireless applications
Author :
O, K. ; Tewksbury, T. ; Dawe, G. ; Tsai, C. ; Garone, P. ; Scharf, B. ; Kermarrec, C. ; Yasaitis, J.
Author_Institution :
Analog Devices Inc., Wilmington, MA, USA
Abstract :
Microwave and dc characteristics, and wireless applications of a low cost and low power silicon bipolar process with NMOS transistors are described. The process features 25-GHz double-polysilicon self-aligned npn bipolar transistors with 5.5-V BV/sub CEO/, optional 0.7-/spl mu/m NMOS transistors with p/sup +/ polysilicon gate for switch applications, lateral pnp transistors, high and low valued resistors, inductors, and p/sup +/ polysilicon-to-n/sup +/ plug capacitors. The RF and microwave capabilities of the process up to several GHz are demonstrated by fabricating and characterizing RF amplifiers, low noise amplifiers, and RF switches.
Keywords :
BIMOS integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; bipolar MMIC; elemental semiconductors; field effect transistor switches; integrated circuit technology; microwave amplifiers; silicon; 0.7 micron; 2.4 GHz; 25 GHz; 5.5 V; 800 MHz; 900 MHz; DC characteristics; NMOS transistors; RF amplifiers; RF capabilities; RF switches; Si; Si npn bipolar process; UHF; double-polysilicon self-aligned npn bipolar transistors; fabrication; lateral pnp transistors; low cost process; low noise amplifiers; low power; microwave capabilities; microwave characteristics; p/sup +/ polysilicon gate; p/sup +/ polysilicon-to-n/sup +/ plug capacitors; switch applications; wireless applications; Bipolar transistors; Costs; MOS devices; MOSFETs; Microwave transistors; Radio frequency; Radiofrequency amplifiers; Resistors; Silicon; Switches;
Conference_Titel :
Technologies for Wireless Applications Digest, 1995., MTT-S Symposium on
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-1982-6
DOI :
10.1109/MTTTWA.1995.512332
