Title :
Optically-activated gate control (OAGC) for the next-generation SiC-based power electronics devices and applications
Author :
Mazumder, Sudip K., Sr. ; Sarkar, Tirthajyoti
Author_Institution :
Lab. of Energy & Switching Electron. Syst., Univ. of Illinois at Chicago, Chicago, IL, USA
Abstract :
Novel photonic control of power semiconductor devices for next-generation power electronics applications are discussed with special emphasis on SiC DMOSFET. Key mechanism behind the photonic modulation of the switching dynamics of the SiC DMOSFET is illustrated. Specific aspects of switching loss reduction, compensation for temperature-induced drift, and on-state impedance control of the SiC DMOSFET are discussed along with experimental demonstration. Potential applications include high-power, high-frequency electronics in power systems, pulsed-power, EMI-immune, high power-density automotive and aerospace switching converters etc.
Keywords :
III-V semiconductors; electromagnetic interference; gallium arsenide; optical modulation; optical switches; power MOSFET; silicon compounds; wide band gap semiconductors; DMOSFET; EMI immunity; GaAs-SiC; high-frequency electronics; high-power electronics; next-generation power electronics devices; on-state impedance control; optical isolation; optically-activated gate control; photonic control; power semiconductor devices; switching dynamics modulation; switching loss reduction; temperature-induced drift; GaAs; SiC DMOSFET; high temperature; optically-controlled; photonic compensation; power semiconductor; switching dynamics; wide bandgap;
Conference_Titel :
Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2893-9
Electronic_ISBN :
978-1-4244-2893-9
DOI :
10.1109/ECCE.2009.5316076
