Title :
Electrical and optical analysis of low fluence fast neutron damage to JFETs
Author :
Forster, S. ; Hoffmann, A. ; Charles, J.-P. ; Kerns, S.E. ; Kerns, D.V. ; de la Bardonnie, M. ; Mialhe, P.
Author_Institution :
Centre Lorrain d´´Opt. et d´´Electron. des Solides, Metz, France
Abstract :
The effects of fast neutron irradiation (30 MeV) on silicon n-channel JFETs are studied. Electrical parameters of the gate-channel junction are analyzed at several fluences using a custom software. Electrical parameter changes are attributed to bulk semiconductor defects. Irradiation effects on passivation overlayers are evaluated using analysis of gate-channel junction electroluminescence
Keywords :
electroluminescence; junction gate field effect transistors; neutron effects; passivation; 30 MeV; Si; bulk semiconductor defect; electrical parameters; electroluminescence; gate-channel junction; neutron irradiation; passivation; silicon n-channel JFET; Avalanche breakdown; Electric resistance; Electric variables; Electroluminescence; Ionizing radiation; JFETs; Microelectronics; Neutrons; Passivation; Silicon;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858633
