DocumentCode
2273880
Title
High efficiency FET power amplifier with very low drain bias for mobile communication
Author
Jiadong Huang ; Ding Zhan
Author_Institution
Microwave Div., Electronic Instrum. Inst., Yangzhou, China
fYear
1995
fDate
20-22 Feb. 1995
Firstpage
123
Lastpage
126
Abstract
A high efficiency GaAs FET power amplifier with very low drain bias voltage 3 V was investigated at 1.6 GHz. The power amplifier was worked at F mode operation by using harmonic turning of output matching network and biasing near pinch off. The power efficiency of near 70 % with 25 dBm output was achieved. The low harmonic level shows the amplifier has the capability of the linear amplifier.
Keywords
III-VI semiconductors; UHF power amplifiers; gallium arsenide; land mobile radio; radio transmitters; telecommunication equipment testing; 1.6 GHz; 3 V; 70 percent; F mode operation; GaAs; biasing; drain bias; harmonic level; harmonic turning; high efficiency FET power amplifier; linear amplifier; mobile communication; output matching network; pinch off; power efficiency; Gallium arsenide; High power amplifiers; Impedance; Low voltage; Microwave FETs; Mobile communication; Operational amplifiers; Power amplifiers; Power system harmonics; Turning;
fLanguage
English
Publisher
ieee
Conference_Titel
Technologies for Wireless Applications Digest, 1995., MTT-S Symposium on
Conference_Location
Vancouver, BC, Canada
Print_ISBN
0-7803-1982-6
Type
conf
DOI
10.1109/MTTTWA.1995.512337
Filename
512337
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