Title :
High efficiency FET power amplifier with very low drain bias for mobile communication
Author :
Jiadong Huang ; Ding Zhan
Author_Institution :
Microwave Div., Electronic Instrum. Inst., Yangzhou, China
Abstract :
A high efficiency GaAs FET power amplifier with very low drain bias voltage 3 V was investigated at 1.6 GHz. The power amplifier was worked at F mode operation by using harmonic turning of output matching network and biasing near pinch off. The power efficiency of near 70 % with 25 dBm output was achieved. The low harmonic level shows the amplifier has the capability of the linear amplifier.
Keywords :
III-VI semiconductors; UHF power amplifiers; gallium arsenide; land mobile radio; radio transmitters; telecommunication equipment testing; 1.6 GHz; 3 V; 70 percent; F mode operation; GaAs; biasing; drain bias; harmonic level; harmonic turning; high efficiency FET power amplifier; linear amplifier; mobile communication; output matching network; pinch off; power efficiency; Gallium arsenide; High power amplifiers; Impedance; Low voltage; Microwave FETs; Mobile communication; Operational amplifiers; Power amplifiers; Power system harmonics; Turning;
Conference_Titel :
Technologies for Wireless Applications Digest, 1995., MTT-S Symposium on
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-1982-6
DOI :
10.1109/MTTTWA.1995.512337
