Modeling of monolithic inductors and transformers for silicon RFIC design

Author

Long, J.R. ; Copeland, M.A.

Author_Institution

Carleton Univ., Ottawa, Ont., Canada

fYear

1995

fDate

20-22 Feb. 1995

Firstpage

129

Lastpage

134

Abstract

Monolithic microstrip inductors and transformers suitable for RFIC applications have been successfully integrated in a production silicon BiCMOS VLSI technology. A computer program which extracts a physically-based model of the microstrip components suitable for circuit (SPICE) simulation is described. Model accuracy is evaluated for variations in metallization, layout geometry and substrate parameters, and experimental measurements of inductors and transformers fabricated are presented.

Keywords

BiCMOS analogue integrated circuits; MMIC; SPICE; UHF integrated circuits; VLSI; circuit analysis computing; elemental semiconductors; inductors; integrated circuit layout; integrated circuit metallisation; integrated circuit modelling; microstrip circuits; transformers; BiCMOS VLSI technology; SPICE simulation; Si; Si RFIC design; layout geometry; metallization; microstrip inductors; microstrip transformers; monolithic inductors; monolithic transformers; physically-based model; substrate parameters; Application software; BiCMOS integrated circuits; Inductors; Integrated circuit technology; Microstrip; Production; Radiofrequency integrated circuits; Silicon; Transformers; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Technologies for Wireless Applications Digest, 1995., MTT-S Symposium on

Conference_Location

Vancouver, BC, Canada

Print_ISBN

0-7803-1982-6

Type

conf

DOI

10.1109/MTTTWA.1995.512338

Filename

512338