DocumentCode
2274044
Title
Development of Piezoelectric RF MEMS Switch and Phase Shifter
Author
Hudson, Tracy D.
Author_Institution
U.S. Army Aviation & Missile Res. Dev. & Eng. Center (AMRDEC), Redstone Arsenal, AL
fYear
2008
fDate
13-16 July 2008
Firstpage
112
Lastpage
115
Abstract
Piezoelectric materials offer unique material characteristics, where elastic deformation is induced by electric field stimulation. These novel material properties can be exploited to create RF MEMS switches and phase shifters with the added benefit of low voltage actuation, reduced power consumption, low cost, and improved reliability with larger contact force and bi-directionality. A novel design for a RF phase shifter has been created for military applications. AMRDEC has developed bond and etch processes, analyzed material combinations and performed extensive test and evaluation of both coplanar waveguides and RF actuators. Significant effort has gone into reducing stress in the structural layers to prevent excessive deformation in switch structures. Improvements in post-release residual stress can be realized by eliminating thermal oxide layers and employing deep silicon etches from the backside for release. Test results indicate that low voltage (~10 V) actuation is achievable.
Keywords
etching; microswitches; phase shifters; piezoelectric materials; RF MEMS switch; RF phase shifter; elastic deformation; etch process; piezoelectric material; Etching; Low voltage; Material properties; Phase shifters; Piezoelectric materials; Radio frequency; Radiofrequency microelectromechanical systems; Residual stresses; Switches; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Micro/Nano Symposium, 2008. UGIM 2008. 17th Biennial
Conference_Location
Louisville, KY
Print_ISBN
978-1-4244-2484-9
Electronic_ISBN
978-1-4244-2485-6
Type
conf
DOI
10.1109/UGIM.2008.36
Filename
4573214
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