Title :
Secondary ion emission under bombardment of GaAs monocrystal by molecular ions of copper phthalocyanine
Author :
Morozov, S.N. ; Rasulev, U.Kh.
Author_Institution :
Inst. of Ion-Plasma & laser Technol., Tashkent, Uzbekistan
fDate :
June 30 2014-July 4 2014
Abstract :
The spectra of secondary ion emission in sputtering of GaAs monocrystal by molecular ions CuPc+, ¼CuPc+, CuPc2+ within the energy range Eo = 3-12 keV have been studied. The preferential yield of the cluster ions Ga+n with the number of the constituent atoms n more than 20 has been observed. This yield has increased significantly non-additively with the raise in the number of atoms in a molecular ion projectile.
Keywords :
III-V semiconductors; copper compounds; gallium arsenide; secondary ion emission; sputtering; GaAs; GaAs monocrystal bombardment; cluster ions; constituent atoms; copper phthalocyanine; electron volt energy 3 keV to 12 keV; molecular ion projectile; preferential yield; secondary ion emission spectra; sputtering; Atomic measurements; Copper; Gallium; Gallium arsenide; Ion emission; Ions; Projectiles;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
DOI :
10.1109/IVESC.2014.6892042
