• DocumentCode
    227405
  • Title

    Secondary ion emission under bombardment of GaAs monocrystal by molecular ions of copper phthalocyanine

  • Author

    Morozov, S.N. ; Rasulev, U.Kh.

  • Author_Institution
    Inst. of Ion-Plasma & laser Technol., Tashkent, Uzbekistan
  • fYear
    2014
  • fDate
    June 30 2014-July 4 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The spectra of secondary ion emission in sputtering of GaAs monocrystal by molecular ions CuPc+, ¼CuPc+, CuPc2+ within the energy range Eo = 3-12 keV have been studied. The preferential yield of the cluster ions Ga+n with the number of the constituent atoms n more than 20 has been observed. This yield has increased significantly non-additively with the raise in the number of atoms in a molecular ion projectile.
  • Keywords
    III-V semiconductors; copper compounds; gallium arsenide; secondary ion emission; sputtering; GaAs; GaAs monocrystal bombardment; cluster ions; constituent atoms; copper phthalocyanine; electron volt energy 3 keV to 12 keV; molecular ion projectile; preferential yield; secondary ion emission spectra; sputtering; Atomic measurements; Copper; Gallium; Gallium arsenide; Ion emission; Ions; Projectiles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    978-1-4799-5770-5
  • Type

    conf

  • DOI
    10.1109/IVESC.2014.6892042
  • Filename
    6892042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=227405