Title :
Hemispherical-grain polycrystalline silicon films: The dependence of geometric characteristics of grains on formation conditions
Author :
Novak, Andrei V.
Author_Institution :
MIET, Nat. Res. Univ. of Electron. Technol., Zelenograd, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
The dependences of the main statistical characteristics of the surface (correlation functions, surface-height distribution functions, correlation length, width of interface), average height and lateral size of grains on the formation conditions have been determined by atomic force microscopy for hemispherical-grain polycrystalline silicon Films (HSG-Si). Dependence of grains shape on the deposition temperature and film thickness is found.
Keywords :
atomic force microscopy; chemical vapour deposition; crystal microstructure; elemental semiconductors; semiconductor thin films; silicon; surface morphology; Si; atomic force microscopy; correlation functions; correlation length; deposition temperature; film thickness; grain average height; grain formation conditions; grain geometric characteristics; grain lateral size; grain statistical characteristics; hemispherical grain polycrystalline silicon films; interface width; surface height distribution functions; Correlation; Films; Grain size; Shape; Silicon; Surface morphology; Surface treatment;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
DOI :
10.1109/IVESC.2014.6892046
