Title :
Total dose induced increase in input offset voltage in JFET input operational amplifiers
Author :
Pease, Ronald L. ; Krieg, Jeff ; Gehlhausen, Mark ; Platteter, Dale ; Black, Jeff
Author_Institution :
RLP Res., Albuquerque, MA, USA
Abstract :
Four different types of commercial JFET input operational amplifiers were irradiated with ionizing radiation under a variety of test conditions. All experienced significant increases in input offset voltage (Vos) for the worst-case irradiation bias. Microprobe measurement of the electrical characteristics of the de-coupled input JFETs on both non-irradiated and irradiated circuits demonstrates that the increase in Vos is a result of the mismatch of the pinchoff voltage of the degraded JFETs
Keywords :
analogue integrated circuits; integrated circuit testing; junction gate field effect transistors; monolithic integrated circuits; operational amplifiers; radiation effects; JFET input op amps; commercial opamps; de-coupled input JFETs; degraded JFETs; electrical characteristics; input offset voltage; ionizing radiation; irradiated circuits; microprobe measurement; operational amplifiers; pinchoff voltage mismatch; test conditions; total dose induced increase; Circuit testing; Cranes; Degradation; Electric variables; JFET circuits; JFET integrated circuits; MOSFETs; Operational amplifiers; Temperature sensors; Voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858649
