Total dose induced increase in input offset voltage in JFET input operational amplifiers

Author

Pease, Ronald L. ; Krieg, Jeff ; Gehlhausen, Mark ; Platteter, Dale ; Black, Jeff

Author_Institution

RLP Res., Albuquerque, MA, USA

fYear

1999

fDate

1999

Firstpage

569

Lastpage

572

Abstract

Four different types of commercial JFET input operational amplifiers were irradiated with ionizing radiation under a variety of test conditions. All experienced significant increases in input offset voltage (V_os) for the worst-case irradiation bias. Microprobe measurement of the electrical characteristics of the de-coupled input JFETs on both non-irradiated and irradiated circuits demonstrates that the increase in V_os is a result of the mismatch of the pinchoff voltage of the degraded JFETs

Keywords

analogue integrated circuits; integrated circuit testing; junction gate field effect transistors; monolithic integrated circuits; operational amplifiers; radiation effects; JFET input op amps; commercial opamps; de-coupled input JFETs; degraded JFETs; electrical characteristics; input offset voltage; ionizing radiation; irradiated circuits; microprobe measurement; operational amplifiers; pinchoff voltage mismatch; test conditions; total dose induced increase; Circuit testing; Cranes; Degradation; Electric variables; JFET circuits; JFET integrated circuits; MOSFETs; Operational amplifiers; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on

Conference_Location

Fontevraud

Print_ISBN

0-7803-5726-4

Type

conf

DOI

10.1109/RADECS.1999.858649

Filename

858649