DocumentCode
2274202
Title
Single event upsets in the dual-port-board SRAMs of the MPTB experiment
Author
Barak, J. ; Barth, J.L. ; Seidleck, C.M. ; Marshall, C.J. ; Marshall, P.W. ; Carts, M.A. ; Reed, R.A.
fYear
1999
fDate
1999
Firstpage
582
Lastpage
587
Abstract
The in-flight data of SEUs in the devices of panels B and C of the MPTB experiments are presented. Ground test data for M65656 are used to calculate the SEU rates in this device using the calculated flux of ions along the orbit. The models used are CREME96, simple expressions derived here, and the figure of merit model. A very good agreement is found between these calculations and the observed rates
Keywords
SRAM chips; errors; ion beam effects; space vehicle electronics; CREME96 model; M65656 ground test data; MPTB experiment; SEU rates; calculated ion flux; dual-port-board SRAMs; figure of merit model; in-flight data; microelectronics/photonics test bed; single event upsets; space radiation environment; Belts; Extraterrestrial measurements; Orbital calculations; Protons; Random access memory; Satellites; Semiconductor device measurement; Single event transient; Single event upset; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858651
Filename
858651
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