Title :
Single event upsets in the dual-port-board SRAMs of the MPTB experiment
Author :
Barak, J. ; Barth, J.L. ; Seidleck, C.M. ; Marshall, C.J. ; Marshall, P.W. ; Carts, M.A. ; Reed, R.A.
Abstract :
The in-flight data of SEUs in the devices of panels B and C of the MPTB experiments are presented. Ground test data for M65656 are used to calculate the SEU rates in this device using the calculated flux of ions along the orbit. The models used are CREME96, simple expressions derived here, and the figure of merit model. A very good agreement is found between these calculations and the observed rates
Keywords :
SRAM chips; errors; ion beam effects; space vehicle electronics; CREME96 model; M65656 ground test data; MPTB experiment; SEU rates; calculated ion flux; dual-port-board SRAMs; figure of merit model; in-flight data; microelectronics/photonics test bed; single event upsets; space radiation environment; Belts; Extraterrestrial measurements; Orbital calculations; Protons; Random access memory; Satellites; Semiconductor device measurement; Single event transient; Single event upset; Testing;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858651
