Effect of excited state transitions and Auger recombination on the T/sub 0/ of InAs/InGaAs quantum dot lasers

Author

Dikshit, A.A. ; Pikal, J.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Wyoming Univ., Laramie, WY, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

547

Abstract

Summary form only given. We investigate the processes that contribute to a lower value of characteristic temperature (T/sub 0/) than that predicted, by using a theoretical model. This model includes occupation of the excited states in the QD, carrier occupation of the wetting layer, Auger recombination, homogeneous and inhomogeneous broadening. Using this model we also investigate the role that dot density and the number of dot layers play in determining T/sub 0/.

Keywords

Auger effect; III-V semiconductors; carrier density; electron-hole recombination; excited states; gallium arsenide; indium compounds; laser theory; quantum dot lasers; semiconductor quantum dots; spectral line broadening; Auger recombination; InAs-InGaAs; InAs/InGaAs quantum dot lasers; carrier occupation; characteristic temperature; dot density; dot layer number; excited state occupation; excited state transitions; homogeneous broadening; inhomogeneous broadening; threshold carrier density; wetting layer; Electrons; Indium gallium arsenide; Laser excitation; Laser modes; Laser transitions; Power generation; Power lasers; Quantum dot lasers; Radiative recombination; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034307

Filename

1034307